Полупроводниковые сепараторные элементы

Содержание:
40 Полупроводниковые сепараторные элементы - общее
41 Полупроводниковая двухполюсная трубка
42 Полупроводниковая трехполюсная трубка
43 Полупроводниковые коммутаторные элементы
44 Пространственный эффектор
45 Микроволновая, милливолновая 2,3-полюсная трубка
46 Элементы разности температуры рефрижератора
47 Другое

L40 GB/T 249 - 1989 半导体分立器件型号命名方法
The rule of type designation for discrete semiconductor devices
L40 GB/T 4589.1 - 1989 半导体器件分立器件和集成电路总规范(可供认证用)
Semiconductor devices - Generic specification for discrete devices and integrated circuits
L40 GB/T 4937 - 1995 半导体器件机械和气候试验方法
Mechanical and climatic test methods for semiconductor devices
L40 GB/T 1 1499 - 2001 半导体分立器件文字符号
Letter symbols for discrete semiconductor devices
L40 GB/T 12300 - 1990 功率晶体管安全工作区测试方法
Test methods of safe operating area for power transistors
L40 GB/T 12560 - 1999 半导体器件分立器件分规范
Semiconductor devices - Sectional specification for discrete devices
L40 GB/T 15651 - 1995 半导体器件分立器件和集成电路第5部分: 光电子器件
Semiconductor devices - Discrete devices and integrated circuits - Part 5: optoelectronic devices
L40 GB/T 17573 - 1998 半导体器件分立器件和集成电路第1部分: 总则
Semiconductor devices - Discrete devices and integrated circuits - Part 1: General
L40 GB/T 18910.1 - 2002液晶和固态显示器件第1部分: 总规范
Liquid crystal and solid - state display devices - Part l: Generic specification
L40 GB/T 18910.2 - 2003液晶和固态显示器件第2部分: 液晶显示模块分规范
Liquid crystal and solid-state display devices - Part 2: Liquid crystal display modules sectional specification
L4l GB/T 4023 - 1997 半导体器件分立器件和集成电路第2部分: 整流二极管
Semiconductor devices - Discrete devices and integrated circuits - Part 2: Rectifier diodes
L4l GB/T 6570 - 1986 微波二极管测试方法
Measuring methods for microwave diodes
L4l GB/T 6588 - 2000 半导体器件分立器件第3部分: 信号(包括开关)和调整二极管第l篇信号二极管、开关二极管和可控雪崩二极管空白详细规范
Semiconductor devices - Discrete devices - Part 3:Signal(including switching)and regulator diodes - Section one - Blank detail specification for signal diodes, switching diodes and controlled-avalanche diodes
L41 GB/T 6589 - 2002 半导体器件分立器件第3-2部分: 信号(包括开关)和调整二极管 电压调整二极管和电压基准二极管 (不包括温度补偿精密基准二极管) 空白详细规范
Semiconductor devices - Discrete devices - Part 3-2: Signal(including switching)and regulator diodes - Blank detail specification for voltage-regulator diodes and voltage-reference diodes(excluding temperature - compensated precision reference diodes)
L41 GB/T 12562 - 1990 PIN二极管空白详细规范(可供认证用)
Blank detail specification for PIN diodes
L4l GB/T 13063 - 1991 电流调整和电流基准二极管空白详细规范
Blank detail specification for current-regulator and current-reference diodes
L41 GB/T 13066 - 1991 单结晶体管空白详细规范
Blank detail specification for unijunction transistors
L41 GB/T 14863 - 1993 用栅控和非栅控二极管的电压一电容关系测定硅外延层
中净载流子浓度的标准方法
Standard test method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes
L4l GB/T 15137 - 1994 体效应二极管空白详细规范
Blank detail specification for gum diodes
L41 GB/T 15177 - 1994 微波检波、混频二极管空白详细规范
Blank detail specification for microwave detectors and mixer diodes
L41 GB/T 15178 - 1994 变容二极管空白详细规范
Blank detail specification for variable capacitance diodes
L42 GB/T 4586 - 1994 半导体器件分立器件第8部分: 场效应晶体管
Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
L42 GB/T 4587 - 1994 半导体分立器件和集成电路第7部分: 双极型晶体管
Semiconductor discrete devices and integrated circuits - Part 7: Bipolar transistors
L42 GB/T 6217 - 1998 半导体器件分立器件第7部分: 双极型晶体管第一篇高低频放大环境额定的双极型晶体管空白详细规范
Semiconductor devices - Discrete devices - Part 7:Bipolar transistors - Section one: Blank detail specification for ambient-rated bipolar transistors for low and high frequency amplification
L42 GB/T 6218 - 1996 开关用双极型晶体管空白详细规范
Blank detail specification for bipolaf transistors for switching applications
L42 GB/T 6219 - 1998 半导体器件分立器件第8部分: 场效应晶体管第一篇1GHz、5W以下的单栅场效应晶体管空白详细规范
Semiconductor devices - Discrete devices - Part 8:Field-effect transistors - Section one: Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz
L42 GB/T 6256 - 1986 工业加热三极管空白详细规范(可供认证用)
Blank detail specification for industrial heat ingtriodes
L42 GB/T 6571 - 1995 半导体器件分立器件第3部分: 信号(包括开关)和调整二极管
Semiconductor devices - Discrete devices - Part 3: signal(including switching)and regulator diodes
L42 GB/T 7576 - 1998 半导体器件分立器件第7部分: 双极型晶体管第四篇高频放大管壳额定双极型晶体管空白详细规范
Semiconductor devices - Discrete devices - Part 7: Bipolar transistors - Section Four: Blank detail specification for case-rated bipolar transistors for high - frequency amplification
L42 GB/T 7577 - 1996 低频放大管壳额定的双极型晶体管空白详细规范
Blank detail specification for case-rated bipolar transistors for low-frequency amplification
L42 GB/T 7581 - 1987 半导体分立器件外形尺寸
Dimensions of outlines for semiconductor discrete devices
L43 GB/T 6351 - 1998 半导体器件分立器件第2部分: 整流二极管第一篇100A以下环境或管壳额定整流二极管(包括雪崩整流二极管)空白详细规范
Semiconductor devices - Discrete deviees - Part 2: Rectifier diodes - Section One: Blank detail specification for rectifier diodes(including avalanche rectitier diodes), ambient and case-rated, up to 100A
L43 GB/T6352 - 1998 半导体器件分立器件第6部分: 闸流晶体管第一篇100A以下环境或管壳额定反向阻断三极闸流晶体管空白详细规范
Semiconductor devices - Discrete devices - Part 6: Whyristors - Section One: Blank detail specification for reverse blocking triode thyristors, ambient or case – rated up to 100A
L43 GB/T 6590 - 1998 半导体器件分立器件第6部分: 闸流晶体管第二篇100A以下环境或管壳额定的双向三极闸流晶体管空白详细规范
Semiconductor devices - Discrete devices - Part 6: Thyristors - Section Two: Blank detail specification for bidirectional triode thyristors(triacs), ambient or case-rated, up to 100A
L43 GB/T 9436 - 1988 液晶显示器件参数符号
Letter symbols of parameter for liquid crystal display devices
L44 GB/T 15449 - 1995 管壳额定开关用场效应晶体管空白详细规范
Blank detail-specification for field-effect transistors for case-rated switching application
L44 GB/T 15450 - 1995 硅双栅场效应晶体管空白详细规范
Blank detail specification for silicon dual-gate field-effect transistors
L44 GB/T 16468 - 1996 静电感应晶体管系列型谱
Series programmes for static induction transistors
L45 GB/T 15529 - 1995 半导体发光数码管空白详细规范
Blank detail specification for LED numeric displays
L47 GB/T 15167 - 1994 半导体激光光源总规范
General specification for light source of semiconductor lasers
L47 GB/T 18680 - 2002 液晶显示器用氧化铟锡透明导电玻璃
The transparent conductive glass with indium-tin oxide films used in liquid crystal display
L48 GB/T 4654 - 1984 碳化硅、锆英砂、陶瓷类红外辐射加热器通用技术条件
The general technical specifications on silicon carbide and zircon ceramic infrared heater
L48 GB/T 11153 - 1989 激光小功率计性能检测方法
Parameters testing method of laser power meter in low range
L48 GB/T 14078 - 1993 氦氖激光器技术条件
He-Ne laser specification
L48 GB/T 15649 - 1995 半导体激光二极管空白详细规范
Blank detail specification for semiconductor laser diodes
L49 GB/T 4619 - 1996 液晶显示器件测试方法
Measuring methods for liquid crystal display devices
L49 GB/T 12848 - 1991 扭曲向列型液晶显示器件总规范(可供认证用)
Generic specification of twisted nematic liquid crystal display devices
L49 GB/T 12849 - 1991 钟、表用扭曲向列型液晶显示器件空白详细规范(可供认证用)
Blank detail specification of twisted nematic liquid crystal displays for watches
L49 GB/T 12850 - 1991 计算器用扭曲向列型液晶显示器件空白详细规范(可供认证用)
Blank detail specification of twisted nematic liquid crystal displays for calculators
L49 GB/T 12851 - 1991 仪器、仪表用扭曲向列型液晶显示器件空白详细规范(可供认证用)
Blank detail specification of twisted nematic liquid crystal displays for instruments
L49 GB/T 14116 - 1993 彩色液晶显示器件的光度和色度的测试方法
Photomentric and colorimetric methods of measure-merit of color liquid crystal displays
L49 GB/T 14117 - 1993 彩色液晶显示器件空白详细规范(可供认证用)
Blank detail specification of color liquid crystal displays
L49 GB/T 15655 - 1995 超扭曲向列型液晶显示器件分规范
Sectional specification for super-twisted nematic liquid crystal display devices
L49 GB/T 15656 - 1995 超扭曲向列型液晶显示器件空白详细规范
Blank detail specification of super-twisted nematic liquid crystal display devices